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| Datasheet File OCR Text: |
| NTE583 Silicon Rectifier Diode Schottky, RF Switch Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (TA = +25C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Surge Non-Repetitive Forward Current (tp 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Ambient (Figure 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . 400C/W Figure 1 d d * d = 4mm Infinite heat sinks CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Characteristics Breakdown Voltage Continuous Forward Voltage Continuous Reverse Current Dynamic Characteristics Small Signal Capacitance Minority Carrier Life Time C VR = 0, f = 1MHZ IF = 5mA, Krakauer Method - - - - 2 100 pF ps V(BR) VF(1) IR(1) IR = 10A IF = 1mA IF = 15mA VR = 50V 70 - - - - - - - - 0.41 1 0.2 V V V A Symbol Test Conditions Min Typ Max Units Note 1. Pulse Test tp 300s < 2% 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max |
Price & Availability of NTE583
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